Magnetic Metamorphism in Modified Dilute Magnetic Semiconductors

This book presents a detailed and useful description of the structural, electronic, and magnetic metamorphosis in modified dilute magnetic semiconductors (DMS). This book constitutes the necessary addition to the library of any researcher, academic, or industrial participant in the areas of materials sciences, condensed matter physics, and/or spintronics. The book traverses the more general phenomenon of magnetic metamorphism, whereby magnetic behavior undergoes drastic transformation due to the application of external (environment, fields, etc.) or internal (doping, defect engineering, nano-structuring, thermal treatments, etc.) modification. This modification could redefine the intrinsic properties of DMS materials or tailor DMS materials to enhance utility in the domains of spintronic devices, sensors, optoelectronics, and quantum technologies. Focusing on oxide-based DMS systems, including ZnO, SnO2, and TiO2, the book covers the atomic basis for magnetism, including carrier-mediated exchange interactions, bound magnetic polaron development, and defect-mediated magnetism mechanisms. Additionally, the links between transition metal dopants, oxygen vacancy engineering, and co-doping processes as routes for achieving room temperature ferromagnetism are presented as no less than necessary steps toward integration in the real-world device application. Based on experimental data, theoretical models, experimental models, and schematic illustrations, progress and ideas are presented in a straightforward and thoughtful format.