Development and Characterization of Resource-saving Doping Processes for Industrial Silicon Solar Cells
Fraunhofer IRB Verlag
ISBN 978-3-8396-1966-7
Standardpreis
Bibliografische Daten
Fachbuch
Buch. Softcover
2023
In englischer Sprache
Umfang: 139 S.
Format (B x L): 14,8 x 21 cm
Verlag: Fraunhofer IRB Verlag
ISBN: 978-3-8396-1966-7
Weiterführende bibliografische Daten
Das Werk ist Teil der Reihe: Solare Energie- und Systemforschung / Solar Energy and Systems Research
Produktbeschreibung
High throughput is reached by increasing the wafer load in the process using wafer stacks, where the wafer surfaces are touching each other. The interactions between phosphorus diffusion and thermal oxidation of the stack process approach are examined in detail. Further, a hypothesis for the oxygen gas transport mechanism into the wafer gap is stated and confirmed by experiments and simulation. Further understanding of the stack diffusion approach is generated when investigating boron-doping processes.
Autorinnen und Autoren
Produktsicherheit
Hersteller
Fraunhofer IRB Verlag
irb@irb.fraunhofer.de