Physics and Electrical Diagnostics of Silicon-on-Insulator Nanoelectronic Structures and Devices

This book provides a comprehensive treatment of silicon-on-insulator (SOI) nanoelectronic structures and devices, covering the evolution of SOI technology, wafer fabrication methods, the physics of SOI MOS structures, and the scaling challenges of nanoscale transistors. It presents a detailed overview of electrical characterization and parameter-extraction techniques, including threshold-voltage determination, capacitance-voltage analysis, carrier mobility measurements, and methods for investigating generation and recombination processes. The book further examines the electrical properties and performance of advanced SOI device architectures, including ultra-thin-body MOSFETs, triple-gate FinFETs, and junctionless nanowire transistors, linking fundamental semiconductor physics with practical approaches for evaluating and optimizing next-generation nanoelectronic devices.